
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
Frequency (MHz) (1) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
1030 | Pulse (128 µsec, 10% Duty Cycle) | 50 | 800 Peak | 17.5 | 52.1 |
1090 | 700 Peak | 19.0 | 56.1 | ||
1030 | 52 | 850 Peak | 17.5 | 51.7 | |
1090 | 770 Peak | 19.2 | 56.1 |
Frequency (MHz) (1) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
960 | Pulse (128 µsec, 4% Duty Cycle) |
50 | 747 Peak | 16.7 | 50.8 |
1030 | 713 Peak | 16.5 | 49.7 | ||
1090 | 700 Peak | 16.5 | 47.1 | ||
1215 | 704 Peak | 16.5 | 54.5 |
Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
1030 (2) | Pulse (128 µsec, 10% Duty Cycle) | 50 | 730 Peak | 19.2 | 58.5 |
Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
1030 (2) | Pulse (128 µsec, 10% Duty Cycle) | > 20:1 at all Phase Angles | 17.2 Peak (3 dB Overdrive) | 50 | No Device Degradation |
1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors
1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET
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