AFV10700H|700 W Pulse, 960-1215 MHz, 52 V

Product Details

Features

Internally input and output matched for broadband operation and ease of use
The device can be used single-ended, push-pull, or quadrature configuration
Qualified up to a maximum of 55 V_DD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
RoHS Compliant

RF Performance Tables

Typical Performance

In 1030-1090 MHz reference circuit, I_DQ(A+B) = 100 mA

Frequency (MHz) ⁽¹⁾	Signal Type	V_DD (V)	P_out (W)	G_ps (dB)	η_D (%)
1030	Pulse (128 µsec, 10% Duty Cycle)	50	800 Peak	17.5	52.1
1090		50	700 Peak	19.0	56.1
1030		52	850 Peak	17.5	51.7
1090		52	770 Peak	19.2	56.1

Typical Performance

In 960-1215 MHz reference circuit, I_DQ(A+B) = 100 mA

Frequency (MHz) ⁽¹⁾	Signal Type	V_DD (V)	P_out (W)	G_ps (dB)	η_D (%)
960	Pulse (128 µsec, 4% Duty Cycle)	50	747 Peak	16.7	50.8
1030			713 Peak	16.5	49.7
1090			700 Peak	16.5	47.1
1215			704 Peak	16.5	54.5

Typical Performance

In 1030 MHz narrowband production test fixture, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	V_DD (V)	P_out (W)	G_ps (dB)	η_D (%)
1030 ⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	50	730 Peak	19.2	58.5

Narrowband Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
1030 ⁽²⁾	Pulse (128 µsec, 10% Duty Cycle)	> 20:1 at all Phase Angles	17.2 Peak (3 dB Overdrive)	50	No Device Degradation

1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband production test fixture.

Buy/Parametrics

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English

AFV10700H 700 W Pulse over 960-1215 MHz, 52 V Airfast® RF power LDMOS transistor for avionics applications

1496055876931728358095 PSP

2.5 MB

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documents

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/docs/en/data-sheet/AFV10700H.pdf

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AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet

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Data Sheet

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Aug 8, 2019

980000996212993340

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AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet

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This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

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2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

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Technical Notes

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98ASA10718D, 465H-02, NI-780S-4L

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2016-10-31

NI-780S-4L

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Aug 15, 2016

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NI-780S-4L

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98ASA10793D, 465M-01, NI 780H-4L

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98ASA10793D, NI-780H-4L

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Mar 21, 2016

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98ASA10793D, NI-780H-4L

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98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

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2016-10-31

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

/docs/en/package-information/98ASA00238D.pdf /docs/en/package-information/98ASA00238D.pdf

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98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

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1

/docs/en/data-sheet/AFV10700H.pdf

2017-05-29

1496055876931728358095 PSP 1

Aug 8, 2019

Data Sheet

AFV10700H 700 W Pulse over 960-1215 MHz, 52 V Airfast® RF power LDMOS transistor for avionics applications

None

/docs/en/data-sheet/AFV10700H.pdf

English

documents

2506696

None

980000996212993340

2024-03-13

N

/docs/en/data-sheet/AFV10700H.pdf

AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet

/docs/en/data-sheet/AFV10700H.pdf

documents

980000996212993340

Data Sheet

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en

None

Y

pdf

2

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AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet

2.5 MB

AFV10700H

N

1496055876931728358095

Package Information

3

/docs/en/package-information/98ASA10718D.pdf

2016-10-31

1145376001821716037786 PSP 3

Aug 15, 2016

Package Information

98ASA10718D, 465H-02, NI-780S-4L

None

/docs/en/package-information/98ASA10718D.pdf

English

documents

42869

None

302435339416912908

2022-12-07

N

/docs/en/package-information/98ASA10718D.pdf

NI-780S-4L

/docs/en/package-information/98ASA10718D.pdf

documents

302435339416912908

Package Information

N

en

None

D

pdf

C

N

NI-780S-4L

42.9 KB

98ASA10718D

N

1145376001821716037786

/docs/en/package-information/98ASA10793D.pdf

2016-10-31

1177631115779705085440 PSP 4

Mar 21, 2016

Package Information

98ASA10793D, 465M-01, NI 780H-4L

None

/docs/en/package-information/98ASA10793D.pdf

English

documents

47948

None

302435339416912908

2022-12-07

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/docs/en/package-information/98ASA10793D.pdf

98ASA10793D, NI-780H-4L

/docs/en/package-information/98ASA10793D.pdf

documents

302435339416912908

Package Information

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en

None

D

pdf

A

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98ASA10793D, NI-780H-4L

47.9 KB

SOT1827-1

N

1177631115779705085440

/docs/en/package-information/98ASA00238D.pdf

2016-10-31

1385566997554703827666 PSP 5

Feb 26, 2016

Package Information

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

None

/docs/en/package-information/98ASA00238D.pdf

English

documents

47244

None

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2022-12-07

N

/docs/en/package-information/98ASA00238D.pdf

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

/docs/en/package-information/98ASA00238D.pdf

documents

302435339416912908

Package Information

N

en

None

D

pdf

C

N

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

47.2 KB

SOT1805-1

N

1385566997554703827666

Technical Notes

1

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 2

Jan 19, 2004

Technical Notes

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

N

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

N

en

None

Y

pdf

0

N

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

N

1074535848819727693421

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Documentation

Quick reference to our documentation types.

5 documents

Compact List

AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet[AFV10700H]

PDFAug 8, 2019Rev 2

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C
98ASA10793D, NI-780H-4L[SOT1827-1]

PDFMar 21, 2016Rev A
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L[SOT1805-1]

PDFFeb 26, 2016Rev C

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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Models
AFV10700H RF High-Power Model AWR Product Model Design Kit

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AFV10700H RF High-Power Model ADS Product Model Design Kit

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AFV10700H S-Parameters

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Printed Circuit Boards and Schematics
AFV10700H 1030-1090 MHz Reference Circuit Design Files

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Printed Circuit Boards and Schematics
AFV10700H 1030-1090 MHz PCB DXF file

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Printed Circuit Boards and Schematics
AFV10700H 1030 MHz Narrowband PCB DXF file

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Calculators
AFV10700H RF Power Electromigration MTTF Calculation Program

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Design Files - miscellaneous
AFV10700H 1030-1090 MHz Design Files

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Show All

700 W Pulse over 960-1215 MHz, 52 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Typical Performance

Typical Performance

Typical Performance

Narrowband Load Mismatch/Ruggedness

Related products

MRFE6VS25N

MRF6V10010N

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet[AFV10700H]

Package Information (3)

NI-780S-4L[98ASA10718D]

98ASA10793D, NI-780H-4L[SOT1827-1]

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L[SOT1805-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

AFV10700H 700 W Pulse, 960-1215 MHz, 52 V Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

NI-780S-4L

98ASA10793D, NI-780H-4L

98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

Design Resources

Design Files

Filter by

AFV10700H RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFV10700H RF High-Power Model ADS Product Model Design Kit

AFV10700H S-Parameters

AFV10700H 1030-1090 MHz Reference Circuit Design Files

AFV10700H 1030-1090 MHz PCB DXF file

AFV10700H 1030 MHz Narrowband PCB DXF file

AFV10700H RF Power Electromigration MTTF Calculation Program

AFV10700H 1030-1090 MHz Design Files

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700 W Pulse over 960-1215 MHz, 52 V Airfast^® RF Power LDMOS Transistor