Application Note (3)
Data Sheet (1)
Package Information (2)
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98ASA10833D[SOT1818-4]
Design Files
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720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors
- This page contains information on a product that is not recommended for new designs.
The MMRF1020-04NR3 and MMRF1020-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistors are also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturated power levels up to 500 watts.
OM-780-4L, OM-780G-4L Package Image
Product Details
Features
- Production Tested in a Symmetrical Doherty Configuration
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
RF Performance Table
900 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 19.5 | 48.5 | 7.2 | –29.2 |
| 940 MHz | 19.5 | 49.5 | 7.1 | –32.0 |
| 960 MHz | 19.2 | 48.0 | 7.0 | –35.7 |
Buy/Parametrics
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