1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

MMRF1317H

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Product Details

Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull, or quadrature configuration
  • High ruggedness,handles > 10:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS Compliant
  • Ground-based secondary surveillance radars
  • IFF transponders

Key Parametrics

  • Frequency (Min) (MHz)
    1030
  • Frequency (Max) (MHz)
    1090
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.1
  • P1dB (Typ) (W)
    1300
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.956.0
1090(1)1100 Peak18.857.9

Typical Narrowband Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.258.1

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles40
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.

Documentation

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