960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1008H

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Features

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20.3 dB
    Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
  • Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 19.8 dB
    Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

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