960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1009H

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Product Details

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Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Table

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power

Documentation

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4 documents

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