960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1009H

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57
  • P1dB (Typ) (W)
    500
  • Die Technology
    LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power

Design Resources

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Documentation

Quick reference to our documentation types.

4 documents

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