965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

MMRF1007H

See product image

Product Details

Select a section:

Features

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20 dB
    Drain Efficiency: 56%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    965
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Die Technology
    LDMOS

Design Resources

Select a section:

Documentation

Quick reference to our documentation types.

4 documents

Support

What do you need help with?