1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs

MMRF1015N

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Product Details

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Features

  • Typical Two-Tone Performance @ 960 MHz, VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
    Power Gain: 18 dB
    Drain Efficiency: 32%
    IMD: –37 dBc
  • Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (W)
    10
  • Die Technology
    LDMOS

Design Resources

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Documentation

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