1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

MRFE6VS25N

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Product Details

Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    44
  • P1dB (Typ) (W)
    25
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    25 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    25.5 @ 512
  • Efficiency (Typ) (%)
    74.5, 74.7
  • Thermal Resistance (Spec) (℃/W)
    1.2
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

VHF-UHF Performance

VDD = 50 Volts

512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts

Ruggedness, 1030 MHz

Design Resources

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