1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor

MMRF1320N

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Product Details

Features

  • Wide operating frequency range
  • Ruggedness
  • Input and output allowing wide frequency range utilization
  • Integrated stability enhancements
  • Low thermal resistance
  • Integrated ESD protection circuitry
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
230CW15026.372.0
230Pulse (100 µsec,
20% Duty Cycle)
150 Peak26.170.3

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230Pulse
(100 µsec,
20% Duty Cycle)
> 65:1 at all Phase Angles 0.62 Peak
(3 dB Overdrive)
50No Device Degradation

Design Resources

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Documentation

Quick reference to our documentation types.

4 documents

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