1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs
MMRF1308H Receive alerts
- Not Recommended for New Designs
- This page contains information on a product that is not recommended for new designs.
These high ruggedness devices, MMRF1308HR5 and MMRF1308HSR5, are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
NI-1230H-4S, NI-1230S-4S Package Image
Product Details
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Part numbers include: MMRF1308H, MMRF1308HS.
RF Performance Table
230 MHz Narrowband
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (100 µsec, 20% Duty Cycle) |
600 Peak | 230 | 25.0 | 74.6 | –18 |
| CW | 600 Avg. | 230 | 24.6 | 75.2 | –17 |
- Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
- 600 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins
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Package Information
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins