125 W CW over 1-2700 MHz, 50 V Airfast® RF Power GaN Transistor


Roll over image to zoom in

Product Details

Select a section:


  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Enhanced thermal resistance packaging
  • Input matched for extended wideband performance
  • High ruggedness: > 20:1 VSWR
  • RoHS compliant

RF Performance Tables

Typical 450–2700 MHz Performance

VDD = 50 Vdc, TA = 25°C, IDQ = 200 mA

Load Mismatch/Ruggedness

1. Measured in 450–2700 MHz reference circuit.
2. Measured in 2500 MHz production test fixture.


Quick reference to our documentation types.

4 documents

Design Resources

Select a section:

Design Files

2 design files


What do you need help with?