1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, 2xW-CDMA RF Power LDMOS Transistors

MMRF1004N

See product image

Product Details

Select a section:

Features

  • Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP
    Power Gain: 15.5 dB
    Drain Efficiency: 36%
    IMD: –34 dBc
  • Typical 2-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
    Power Gain: 15.5 dB
    Drain Efficiency: 15%
    IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
  • Typical Single-Carrier N-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (1930-1990 MHz),IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.5 dB
    Drain Efficiency: 16%
    ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth
  • Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg., Full Frequency Band (1805-1880 MHz)
    Power Gain: 16 dB
    Drain Efficiency: 33%
    EVM: 1.3% rms
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1600
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (W)
    10
  • Die Technology
    LDMOS

Design Resources

Select a section:

Documentation

Quick reference to our documentation types.

1-5 of 7 documents

Show All

Support

What do you need help with?