30-2200 MHz, 125 W CW, 50 V RF Power GaN Transistor

MMRF5017HS

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Product Details

Features

  • Advanced GaN on SiC, offering high power density
  • Decade bandwidth performance
  • Input matched for extended wideband performance
  • High ruggedness: > 10:1 VSWR
  • RoHS compliant
  • Ideal for military end-use applications, including the following:
    • Narrowband and multi-octave wideband amplifiers
    • Radar
    • Jammers
    • EMC testing
  • Also suitable for commercial applications, including the following:
    • Public mobile radios, including emergency service radios
    • Industrial, scientific and medical
    • Wideband laboratory amplifiers
    • Wireless cellular infrastructure

Key Parametrics

  • Frequency (Min) (MHz)
    30
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Die Technology
    GaN

RF Performance Tables

Typical Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
30-940 (1,2)CW9016.045.0
520 (1)CW12518.059.1
940 (1)CW8018.444.0
2200Pulse
(100 µsec, 20% Duty Cycle)
20017.057.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
520 (1) Pulse
(100 µsec, 20% Duty Cycle)
> 10:1 at All Phase Angles 3.4
(3 dB Overdrive)
50 No Device Degradation
1. Measured in 30-940 MHz wideband reference circuit.
2. The values shown are the minimum measured efficiency performance numbers across the indicated frequency range.

Design Resources

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Documentation

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