720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors

MMRF1020-04N

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Product Details

Features

  • Production Tested in a Symmetrical Doherty Configuration
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    53
  • P1dB (Typ) (W)
    200
  • Die Technology
    LDMOS

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Documentation

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