1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor
MMRF1320N Receive alerts
- Not Recommended for New Designs
- This page contains information on a product that is not recommended for new designs.
These high ruggedness devices, MMRF1320N and MMRF1320GN, are designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output designs allow wide frequency range utilization from 1.8 to 600 MHz.
TO-270WB-4, TO-270WBG-4 Package Images
Product Details
Features
- Wide operating frequency range
- Ruggedness
- Input and output allowing wide frequency range utilization
- Integrated stability enhancements
- Low thermal resistance
- Integrated ESD protection circuitry
- RoHS compliant
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230 | CW | 150 | 26.3 | 72.0 |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 150 Peak | 26.1 | 70.3 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 0.62 Peak (3 dB Overdrive) | 50 | No Device Degradation |
Documentation
Quick reference to our documentation types.
4 documents
-
Package Information
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins
-
Package Information
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins