1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs

MMRF1308H

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Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57.8
  • P1dB (Typ) (W)
    600
  • Die Technology
    LDMOS

RF Performance Table

230 MHz Narrowband

Typical Performance: VDD = 50 Vdc, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 W Pulse Peak Power, 20% Duty Cycle, 100 µsec

Design Resources

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Documentation

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5 documents

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