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MMRF1014N: 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET

Overview

The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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Features

Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, I_DQ = 50 mA, Pout = 4 W PEP

Power Gain: 18 dB

Drain Efficiency: 33%

IMD: –34 dBc
Typical Two-Tone Performance @ 900 MHz, 28 Vdc, I_DQ = 50 mA, Pout = 4 W PEP

Power Gain: 19 dB

Drain Efficiency: 33%

IMD: –39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.

MoreLess

Features

Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, I_DQ = 50 mA, Pout = 4 W PEP

Power Gain: 18 dB

Drain Efficiency: 33%

IMD: –34 dBc
Typical Two-Tone Performance @ 900 MHz, 28 Vdc, I_DQ = 50 mA, Pout = 4 W PEP

Power Gain: 19 dB

Drain Efficiency: 33%

IMD: –39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.

Data Sheets

Application Notes

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PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

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Key Parametrics

Frequency (Min) (MHz)

1
Frequency (Max) (MHz)

2000
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

36
P1dB (Typ) (W)

4
Die Technology

LDMOS