1000 W Peak over 1200-1400 MHz, 50 V RF Power LDMOS Transistor

AFV141KH

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Product Details

Features

  • Internally Input and Output Matched for Broadband Operation and Ease of Use
  • Device Can Be Used Single-Ended, Push-Pull, or in a Quadrature Configuration
  • Qualified up to a Maximum of 50 VDD Operation
  • High Ruggedness, Handles > 20:1 VSWR
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • Commercial L-Band Radar Systems

Key Parametrics

  • Frequency (Min) (MHz)
    1200
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Die Technology
    LDMOS

RF Performance Tables

Typical Pulse Performance

In 1200-1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1200Pulse
(300 µsec, 12% Duty Cycle)
950 Peak15.846.5
13001120 Peak16.547.5
14001000 Peak16.146.6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1400(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1400 MHz narrowband production circuit.

Documentation

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