1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

MRF6V10010N

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Product Details

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Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
    Power Gain: 25 dB
    Drain Efficiency: 69%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (W)
    10
  • Die Technology
    LDMOS

Design Resources

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Documentation

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