1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

MRF6V14300H

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Product Details

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Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%
    Power Gain: 18 dB
    Drain Efficiency: 60.5%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1200
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    55.2
  • P1dB (Typ) (W)
    330
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    330 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    18 @ 1400
  • Efficiency (Typ) (%)
    60.5
  • Thermal Resistance (Spec) (℃/W)
    0.13
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

Design Resources

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