965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
MMRF1007H Receive alerts
- Not Recommended for New Designs
- This page contains information on a product that is not recommended for new designs.
RF Power transistors, MMRF1007HR5 and MMRF1007HSR5, are designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.
NI-1230H-4S, NI-1230S-4S Package Image
Product Details
Features
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA,
Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
- Power Gain: 20 dB
- Drain Efficiency: 56%
- Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push-Pull Operation
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Documentation
Quick reference to our documentation types.
4 documents
-
Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins
-
Package Information
98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins