150 W Pulse over 2700-3100 MHz, 32 V Airfast® RF Power LDMOS Transistor

AFT31150N

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Product Details

Features

  • Characterized with series equivalent large-signal impedance parameters
  • Internally matched for ease of use
  • Qualified up to a maximum of 32 VDD operation
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • Recommended driver: AFIC31025N (25 W)
  • Included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • RoHS Compliant
  • Commercial S-Band radar systems
  • Maritime radar
  • Weather radar

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    3100
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    150.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    17.0 @ 3100
  • Efficiency (Typ) (%)
    50
  • Thermal Resistance (Spec) (℃/W)
    0.042
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 2700-3100 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IRL
(dB)
2700-3100(1)Pulse (300 µsec,
15% Duty Cycle)
150 Peak17.249.0–6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
3100(2)Pulse (300 µsec,
15% Duty Cycle)
10:1
at all Phase Angles
6.8 Peak
(3 dB Overdrive)
32No Device Degradation
1. The values shown are the center band performance numbers across the indicated frequency range.
2. Measured in 3100 MHz narrowband production test fixture.

Design Resources

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Documentation

Quick reference to our documentation types.

5 documents

Design Files

4 design files

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