2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

MRF8P29300H

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    2900
  • Supply Voltage (Typ) (V)
    30
  • P1dB (Typ) (dBm)
    55.1
  • P1dB (Typ) (W)
    320
  • Die Technology
    LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)

Documentation

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