Design Files
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Calculators
MRF7S35120HSR3 RF Power Electromigration MTTF Calculation Program
3100-3500 MHz, 120 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET
MRF7S35120HSR3 Receive alerts
- Not Recommended for New Designs
- This page contains information on a product that is not recommended for new designs.
The MRF7S35120HSR3 is designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
RF ISO 465A image
Product Details
Features
- Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
- Power Gain: 12 dB
- Drain Efficiency: 40%
- Rise Time: 6 ns
- Fall Time: 6 ns
- Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
- Power Gain: 13 dB
- Drain Efficiency: 16%
- RCE: –33 dB (EVM — 2.2% rms)
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power
- Capable of Handling 3 dB Overdrive @ 32 Vdc
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
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