SiGe:C LNA LTE Bypass

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Product Details

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Features

  • Operating frequency from 617 MHz to 960 MHz
  • Noise figure = 0.8 dB
  • Gain 13.7 dB
  • High input 1 dB compression point of −4.5 dBm
  • High in band IP3i of −1 dBm
  • Bypass switch insertion loss of 2.1 dB
  • Supply voltage 1.5 V to 3.1 V
  • Integrated RF supply decoupling
  • Optimized performance at a supply current of 4.9 mA
  • Bypass mode current consumption < 1 µA
  • Integrated temperature stabilized bias for easy design.
  • Requires only one input matching inductor
  • Input and output AC coupled through DC blocking capacitors
  • Integrated matching for the output
  • ESD protection on all pins
  • Low Bill of Materials (BOM)
  • 6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level of 1

Target Applications

Target Applications

  • LNA for LTE reception in smart phones
  • Feature phones
  • Tablet PCs
  • RF front-end modules

Documentation

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3 documents

Design Resources

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Design Files

1 design file

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