SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE/5G NR

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Product Details

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  • Operating frequency from 3300 MHz to 5000 MHz
  • Noise figure 1.0 dB
  • Gain 15 dB
  • High input 1 dB compression point -8 dBm
  • High in band IP3i 4 dBm
  • Bypass switch insertion loss -3.2 dB
  • Supply voltage 1.5 V to 3.1 V
  • Integrated RF supply decoupling capacitor
  • Optimized performance at a supply current 4.7 mA
  • Bypass mode current consumption < 1 μA
  • Integrated temperature stabilized bias for easy design
  • Requires only one input matching inductor
  • Input and output AC coupled through DC blocking capacitors
  • Integrated matching for the output (LTE B42/43, 5G NR n77/n78)
  • ESD protection on all pins
  • Low bill of materials (BOM)
  • 6-pins leadless package; 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level 1

Applications

  • LNA for LTE and 5G NR reception in smartphones
  • Feature phones
  • Tablet PCs
  • RF front-end modules

Documentation

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1 documents

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