400-1400 MHz, 21.3 dB, 22 dBm, 0.52 dB NF E-pHEMT LNA

Overview

The MML09211HT1 is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W-CDMA and LTE.

Features

Ultra Low Noise Figure: 0.52 dB @ 900 MHz
Frequency: 400-1400 MHz
Unconditionally Stable over Temperature
High Reverse Isolation: –35 dB @ 900 MHz
P1dB: 22 dBm @ 900 MHz
Small-Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
Third Order Output Intercept Point: 32.6 dBm @ 900 MHz
Single 5 V Supply
Supply Current: 60 mA
50 Ohm Operation (some external matching required)
Cost-effective 8-pin, 2 mm DFN Surface Mount Plastic Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

Features

Ultra Low Noise Figure: 0.52 dB @ 900 MHz
Frequency: 400-1400 MHz
Unconditionally Stable over Temperature
High Reverse Isolation: –35 dB @ 900 MHz
P1dB: 22 dBm @ 900 MHz
Small-Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
Third Order Output Intercept Point: 32.6 dBm @ 900 MHz
Single 5 V Supply
Supply Current: 60 mA
50 Ohm Operation (some external matching required)
Cost-effective 8-pin, 2 mm DFN Surface Mount Plastic Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

Key Parametrics

Frequency (Min) (MHz)

400
Frequency (Max) (MHz)

1400
Gain (Typ) (dB) @ f (MHz)

21.3 @ 900
NF (dB)

0.52
IP3_i (dBm)

11.3

BSC913XRFBD:RF Module for BSC913x Boards

Evaluation and Development Boards

MML09211H: 400-1400 MHz, 21.3 dB, 22 dBm, 0.52 dB NF E-pHEMT LNA

Overview

Features

Features

DFN 2 x 2 Package Image

DFN 2 x 2 Package Image

Key Parametrics

Development Boards and Designs

Development Boards and Designs