3.5 GHz, 3 W , 6 V Power FET GaAs pHEMT

MRFG35003N6AT1

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Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ = 180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 10 dB
    Drain Efficiency: 27%
    ACPR @ 5 MHz Offset: –42.5 dBc in 3.84 MHz Channel Bandwidth
  • 3 Watts P1dB @ 3550 MHz, CW
  • Excellent Phase Linearity and Group Delay Characteristics
  • High Gain, High Efficiency and High Linearity
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Documentation

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