500-5000 MHz, 9 W, 12 V Power FET GaAs pHEMT

MRFG35010ANT1
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

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Features

  • 9 Watts P1dB @ 3550 MHz, CW
  • Excellent Phase Linearity and Group Delay Characteristics
  • High Efficiency and High Linearity
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

RF Performance Table

LTE, W-CDMA

Typical Single-Carrier W-CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Frequency
(MHz)
Pout
(W)
Gps
(dB)
ACPR
(dBc)
ηD
(%)
IRL
(dB)
750114.5–44.024.0–15
2140113.0–43.025.0–14
2650111.5–43.030.0–15

Documentation

Quick reference to our documentation types.

3 documents

Design Resources

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Design Files

2 design files

  • Models

    MRFG35010ANT1 S-Parameters

  • Printed Circuit Boards and Schematics

    MRFG35010ANT1 750 MHz CAD DXF File with PCB Layout

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