Design Files
2 design files
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Models
MMZ09332BT1 S-Parameters
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Printed Circuit Boards and Schematics
MMZ09332B PCB DXF file
130-1000 MHz, 30 dB, 33 dBm, InGaP HBT Linear Amplifier
MMZ09332B Receive alerts
The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid,
W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air
interfaces with an ACPR of -50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It
operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers
state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
QFN 3 x 3 Package Image
Product Details
Features
- Frequency: 130-1000 MHz
- P1dB: 33 dBm, 450 to 1000 MHz
- OIP3: up to 48 dBm @ 900 MHz
- High Linearity
- Active Bias Control (adjustable externally)
- Single 3 to 5 V Supply
- Single-ended Power Detector
- Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
- RoHS Compliant
RF Performance Tables
Typical PA Performance
VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA| Frequency | Pout (dBm) |
Gps (dB) |
ACPR (dBc) |
ICC (mA) |
Test Signal |
| 748 MHz | 23 | 30.9 | –49.6 | 315 | W-CDMA |
| 942 MHz | 22 | 27.1 | –50.4 | 240 | W-CDMA |
Typical PA Performance
VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA| Frequency | Pout (dBm) |
Gps (dB) |
PAE (%) |
Test Signal |
| 450 MHz | 32.3 30.3 @ 3.6 V | 37.2 26.3 @ 3.6 V | 45.5 @ 5 V 53.7 @ 3.6 V | CW |
| 760 MHz | 32.2 | 30.8 | 40.0 @ 5 V | CW |