Design Files
3 design files
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Models
MMZ25332B4T1 S-Parameters 2200-2500 MHz
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Models
MMZ25332B4T1 S-Parameters 2400-2800 MHz
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Models
MMZ25332B4T1 S-Parameters 1900-2300 MHz
1427-2700 MHz, 26.5 dB, 33 dBm InGaP HBT
MMZ25332B4 Receive alerts
The MMZ25332B4 is a versatile 2-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1427 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package which allows for maximum via hole pattern. The MMZ25332B4 offers high reliability, ruggedness and ESD performance.
QFN 4 x 4, 24-Lead Package Image
Product Details
Features
- Frequency: 1427-2700 MHz
- P1dB: 33 dBm @ 2500 MHz
- Power Gain: 26.5 dB @ 2500 MHz
- OIP3: 48 dBm @ 2500 MHz
- EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
- Active Bias Control (adjustable externally)
- Power Down Control via VBIAS
- Single 3 to 5 Volt Supply
- Single-ended Power Detector
- Cost-effective 24-Pin, 4 mm QFN Surface Mount Plastic Package
- RoHS Compliant
RF Performance Table
Typical Performance
VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA| Frequency | Pout (dBm) |
Gps (dB) |
ACPR (dBc) |
ICC (mA) |
Test Signal |
| 2140 MHz | 21.7 | 26.5 | –48 | 441 | W-CDMA |
| 2350 MHz | 21.5 | 26.6 | –48 | 446 | LTE |
| 2600 MHz | 22.5 | 26.7 | –48 | 453 | LTE |
Documentation
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