Product | Description |
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GaAs Linear Power Transistors | NXP GaAs power transistors are made using an InGaAs pHEMT epitaxial structure for superior RF efficiency and linearity and are designed for operation in base station infrastructure RF power amplifiers. |
General Purpose Amplifiers | Boosting audio with performance, clarity, and efficiency. Our general-purpose amplifiers (GPAs) balance gain, linearity, noise, and power consumption specifications to meet the industry's most demanding needs—including high-gain, small-signal applications in consumer, commercial, industrial, and military use cases. |
Linear Amplifiers | Energy efficiency for future designs. Our linear amplifier portfolio supports a wide range of applications: TD-SCDMA, W-CDMA, and LTE femtocell BTS for consumer/enterprise; SMART grid; mesh networking at 4.9 GHz; WiMAX; WLAN. Combining high-performance design with unique features and application-specific design tools, these solutions enable new designs while accelerating time-to-market. |
Wideband Amplifiers (75 Ω) | With a range of dB gains to choose from, our selection of 1 GHz wideband amplifiers offer ideal Monolithic Microwave Integrated Circuit (MMIC) solutions for high-linearity CATV line extenders and drop amplifiers. |