PMBF4393 - N-channel FET | NXP Semiconductors

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Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service.

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Data Sheet

Product Details

Features

Interchangeable drain and source connections
Small package

Target Applications

Low-power chopper
Switching
Thick and thin-film circuits

Design Resources

Documentation

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^{Data Sheet}
N-channel FETs

PDFRev 2.1Mar 2, 2011304.0 KBPMBF4391_4392_4393_CNVEnglish
^{Package Information}
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

PDFRev 1.1Jan 9, 2017200.2 KBSOT23English
^{Packing Information}
Tape reel SMD; standard product orientation 12NC ending 215

PDFRev 1.0Nov 16, 2012207.1 KBSOT23_215English

N-channel FET

Product Details

Features

Target Applications

Design Resources

Documentation

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N-channel FETs

plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body

Tape reel SMD; standard product orientation 12NC ending 215

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