NPN Wideband Silicon RF Transistor

BFU530XR

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Product Details

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Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 21 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Documentation

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Design Resources

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Design Files

5 design files

Hardware

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