NPN Wideband Silicon RF Transistor
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.
The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
Product Details
Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18 dB at 900 MHz
- 11 GHz fT silicon technology
Target Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators
Buy/Parametrics
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|