NPN Wideband Silicon RF Transistor

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Product Details


  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
  • Maximum stable gain 21.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Part numbers include: BFU550X.


Quick reference to our documentation types.

3 documents

Design Resources

Design Files

5 design files



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