NPN Wideband Silicon RF Transistor

BFU550XR

See product image

Product Details

Select a section:

Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
  • Maximum stable gain 21.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Documentation

Quick reference to our documentation types.

3 documents

Design Resources

Select a section:

Design Files

5 design files

  • Models

    BFU550XR: S-parameters 40 MHz - 6 GHz

  • Models

    BFU550XR: S-parameters and Noise Figure 400 MHz - 2 GHz

  • Models

    BFU5xx family SPICE GP model v2

  • Design Files - miscellaneous

    BFU5XX family ADS design kit v2

  • Design Files - miscellaneous

    Installation manual for NXP® BFU5XX family ADS_design kit v2

Hardware

Support

What do you need help with?