NPN Wideband Silicon RF Transistor

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Product Details

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Features

  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified
  • Maximum stable gain 11 dB at 900 MHz
  • PL(1dB) 22 dBm at 900 MHz
  • 8 GHz fT silicon technology
  • Automotive applications
  • Broadband amplifiers
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications

Documentation

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Design Resources

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Design Files

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