NPN Wideband Silicon RF Transistor

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Product Details

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  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified
  • Maximum stable gain 11 dB at 900 MHz
  • PL(1dB) 22 dBm at 900 MHz
  • 8 GHz fT silicon technology
  • Automotive applications
  • Broadband amplifiers
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications


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Design Resources

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Design Files

4 design files

  • Models

    BFU590Q: S-parameters 40 MHz - 6 GHz

  • Models

    BFU5xx family SPICE GP model v2

  • Design Files - miscellaneous

    BFU5XX family ADS design kit v2

  • Design Files - miscellaneous

    Installation manual for NXP® BFU5XX family ADS_design kit v2


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