NPN Wideband Silicon RF Transistor

See product image

Product Details


  • Medium power, high linearity, high breakdown voltage RF transistor
  • AEC-Q101 qualified
  • Maximum stable gain 11 dB at 900 MHz
  • PL(1dB) 22 dBm at 900 MHz
  • 8 GHz fT silicon technology
  • Automotive applications
  • Broadband amplifiers
  • Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
  • Large signal amplifiers for ISM applications

Part numbers include: BFU590Q.


Quick reference to our documentation types.

1-5 of 7 documents

Show All

Design Files

Quick reference to our design files types.

4 design files


What do you need help with?