NPN Wideband Silicon Germanium RF Transistor

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Product Details


  • 110 GHz fT silicon germanium technology
  • High maximum power gain 14 dB at 12 GHz
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 1.45 dB at 12 GHz

Target Applications

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • AMR
  • Bluetooth
  • FM radio
  • GPS
  • Ka band oscillators DRO’s
  • Low current battery equiped applications
  • Low noise amplifiers for microwave communications systems
  • Microwave driver / buffer applications
  • Mobile TV
  • RKE
  • ZigBee

Part numbers include: BFU710F.


Quick reference to our documentation types.

4 documents

Design Resources

Design Files

2 design files


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