NPN Wideband Silicon Germanium RF Transistor

BFU710F

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Product Details

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Features

  • 110 GHz fT silicon germanium technology
  • High maximum power gain 14 dB at 12 GHz
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 1.45 dB at 12 GHz

Target Applications

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • AMR
  • Bluetooth
  • FM radio
  • GPS
  • Ka band oscillators DRO’s
  • Low current battery equiped applications
  • Low noise amplifiers for microwave communications systems
  • Microwave driver / buffer applications
  • Mobile TV
  • RKE
  • ZigBee

Documentation

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4 documents

Design Resources

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Design Files

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2 design files

  • Models

    S-parameters BFU710F

    ZIPRev 1.0Apr 23, 2019 00:00:00159.6 KBSPAR_BFU710F
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  • Design Files - miscellaneous

    NXP design kit: RF small signal

    ZIPRev 2.4May 12, 2016 00:00:0018.3 MBNXP_DESIGN_KIT_RF_SMALLSIGNAL
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