NPN Wideband Silicon Germanium RF Transistor

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Features

  • Low noise high linearity RF transistor
  • 110 GHz fT silicon germanium technology
  • Optimal linearity for low current and high gain
  • Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
  • Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
    • Low current: 10.8 mA
    • Noise figure < 1.2 dB
    • Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
    • High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
    • Very fast on/off times
    • Unconditionally stable
  • Higher IP3, higher gain or lower noise figure possible with different application circuits

Target Applications

  • High linearity applications
  • Medium output power applications
  • Wi-Fi / WLAN / WiMAX
  • ZigBee

Part numbers include: BFU768F.

Documentation

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4 documents

Design Resources

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Design Files

1 design file

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