1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP61K25H

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Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61
  • P1dB (Typ) (W)
    1250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1250 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    22.9 @ 230
  • Efficiency (Typ) (%)
    74.6
  • Thermal Resistance (Spec) (℃/W)
    0.15
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Volts, IDQ = 100 mA

Application Circuits — Typical Performance

Load Mismatch/Ruggedness

Design Resources

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