MRFE6VP61K25N: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors
Key Parametrics
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 600
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 61
-
- P1dB (Typ) (W)
- 1250
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 1250.0 @ Peak
-
- Test Signal
- Pulse
-
- Power Gain (Typ) (dB) @ f (MHz)
- 23.0 @ 230
-
- Efficiency (Typ) (%)
- 72.3
-
- Thermal Resistance (Spec) (℃/W)
- 0.06
-
- Matching
- unmatched
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108(1,2) | CW | 1309 CW | 24.1 | 77.6 |
| 230(3) | Pulse (100 µsec, 20% Duty Cycle) | 1250 Peak | 23.0 | 72.3 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230(3) | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles |
11.5 Peak (3 dB Overdrive) |
50 | No Device Degradation |
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.