1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP61K25N

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Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
  • Broadcast
    • FM broadcast
    • HF and VHF broadcast
  • Industrial, Scientific, Medical (ISM)
    • CO2 laser generation
    • Plasma etching
    • Particle accelerators (synchrotrons)
    • MRI
    • Industrial heating/welding
  • Aerospace
    • VHF omnidirectional range (VOR)
    • Weather radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61
  • P1dB (Typ) (W)
    1250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1250.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    23.0 @ 230
  • Efficiency (Typ) (%)
    72.3
  • Thermal Resistance (Spec) (℃/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc

Load Mismatch/Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.

Design Resources

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Documentation

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Design Files

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