1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP61K25N
  • Not Recommended for New Designs

  • \n Contact support,\n your local sales representative or an\n \n NXP Authorized Distributor\n \n for product availability.\n

These high ruggedness devices, MRFE6VP61K25N and MRFE6VP61K25GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

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Product Details

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Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
  • Broadcast
    • FM broadcast
    • HF and VHF broadcast
  • Industrial, Scientific, Medical (ISM)
    • CO2 laser generation
    • Plasma etching
    • Particle accelerators (synchrotrons)
    • MRI
    • Industrial heating/welding
  • Aerospace
    • VHF omnidirectional range (VOR)
    • Weather radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,2)CW1309 CW24.177.6
230(3)Pulse
(100 µsec, 20% Duty Cycle)		1250 Peak23.072.3

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230(3) Pulse
(100 µsec,
20% Duty Cycle)		 > 65:1 at all
Phase Angles		 11.5 Peak
(3 dB Overdrive)		 50 No Device
Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.

Documentation

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5 documents

Design Resources

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Design Files

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1-5 of 10 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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  • Models

    MRFE6VP61K25N RF High-Power Model AWR Product Model Design Kit

    ZIPRev 0Apr 2, 2015 00:00:00270.1 KBMRFE6VP61K25N_MDL_AWR
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  • Models

    MRFE6VP61K25N S-Parameters

    S2PRev 0Feb 11, 2015 00:00:0078.1 KBMRFE6VP61K25N_SP
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  • Models

    MRFE6VP61K25N RF High-Power Model ADS Product Model Design Kit

    ZIPRev 1Jun 17, 2019 00:00:00100.8 KBMRFE6VP61K25N_MDL_ADS
    Download
  • Printed Circuit Boards and Schematics

    MRFE6VP61K25N 87.5-108 MHz PCB DXF file

    ZIPRev 0Feb 19, 2015 00:00:00546.0 KBMRFE6VP61K25N_87.5_108_PCB
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