1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs


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Product Details

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  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

RF Performance Table

130, 230 MHz Broadband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 Watts CW Output Power
    • 300 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 Watts CW Operation


Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

1-5 of 7 design files

  • Models

    MRFE6VP6300H, MRFE6VP6300HS RF High-Power Model ADS Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP6300HR3, MRFE6VP6300HSR3 S-Parameters

  • Models

    MRFE6VP6300H, MRFE6VP6300HS RF High-Power Model AWR Product Model Design Kit

  • Printed Circuit Boards and Schematics

    MRFE6VP6300H 230 MHz Test Fixture Design Files

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