1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP5300N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

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Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

1-5 of 6 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP5300N RF High-Power Model ADS Product Model Design Kit

  • Models

    MRFE6VP5300N RF High-Power Model AWR Product Model Design Kit

  • Printed Circuit Boards and Schematics

    MRFE6VP5300N 88-108 MHz PCB DXF file

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