1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP5300N

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Product Details

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Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Documentation

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5 documents

Design Resources

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Design Files

1-5 of 6 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP5300N RF High-Power Model ADS Product Model Design Kit

  • Models

    MRFE6VP5300N RF High-Power Model AWR Product Model Design Kit

  • Printed Circuit Boards and Schematics

    MRFE6VP5300N 88-108 MHz PCB DXF file

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