1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs


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Product Details

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  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

RF Performance Table

230 MHz Narrowband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec


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4 documents

Design Resources

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Design Files

1-5 of 7 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFE6VP5600HR6, MRFE6VP5600HSR6 S-Parameters

  • Models

    MRFE6VP5600HR6, MRFE6VP5600HSR6 RF High-Power Model AWR Product Model Design Kit

  • Models

    MRFE6VP5600H, MRFE6VP5600HS RF High-Power Model ADS Product Model Design Kit

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