1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

MRFE6VP5600H

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Product Details

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57.8
  • P1dB (Typ) (W)
    600
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    600.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    24.6 @ 230
  • Efficiency (Typ) (%)
    75.2
  • Thermal Resistance (Spec) (℃/W)
    0.12
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

230 MHz Narrowband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec

Design Resources

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