MRFE6VP6600N: 1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors
Key Parametrics
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 600
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 57.8
-
- P1dB (Typ) (W)
- 600
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 600.0 @ CW
-
- Test Signal
- CW
-
- Power Gain (Typ) (dB) @ f (MHz)
- 24.0 @ 98
-
- Efficiency (Typ) (%)
- 81
-
- Thermal Resistance (Spec) (℃/W)
- 0.033
-
- Matching
- unmatched
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108(1,3) | CW | 600 CW | 24.0 | 81.8 |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 600 Peak | 24.7 | 73.5 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pout (W) |
Test Voltage |
Result |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles |
4.0 Peak (3 dB Overdrive) | 50 | No Device Degradation |
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.