Documentation
Quick reference to our documentation types.
4 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA01106D, TO-220-3
100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor
MRF101AN Receive alerts
These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Product Details
Features
- Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Included in our product longevity program with assured supply for a minimum of 15 years after launch.
- RoHS compliant
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- HF and VHF communications
- Switch mode power supplies
Key Parametrics
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- Frequency (Min) (MHz)
- 1.8
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- Frequency (Max) (MHz)
- 250
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- Supply Voltage (Typ) (V)
- 50
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- P1dB (Typ) (dBm)
- 50
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- P1dB (Typ) (W)
- 100
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- Test Signal
- Pulse
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- Power Gain (Typ) (dB) @ f (MHz)
- 21.1 @ 230
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- Efficiency (Typ) (%)
- 76.7
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- Thermal Resistance (Spec) (℃/W)
- 1.1
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- Matching
- unmatched
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- Class
- AB
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- Die Technology
- LDMOS
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
Detailed Data |
| 13.56 | CW | 130 CW | 27.1 | 79.6 | MRF101AN-13MHZ | Tool Summary Page |
| 27 | CW | 125 CW | 24.9 | 79.6 | MRF101AN-27MHZ | |
| 40.68 | CW | 120 CW | 23.8 | 81.5 | MRF101AN-40MHZ | |
| 50 | CW | 119 CW | 22.8 | 82.1 | MRF101AN-50MHZ | |
| 81.36 | CW | 130 CW | 23.2 | 80.8 | MRF101AN-81MHZ | |
| 87.5-108 | CW | 115 CW | 20.6 | 76.8 | MRF101AN-88MHZ | |
| 136-174 | CW | 104 CW | 21.2 | 76.5 | MRF101AN-VHF | |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 115 Peak | 21.1 | 76.7 | MRF101AN-230MHZ |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (dBm) |
Test Voltage |
Result |
| 40.68 | CW | > 65:1 at all Phase Angles | 0.64 CW | 50 | No Device Degradation |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 1.8 Peak (3 dB Overdrive) | 50 | No Device Degradation |
Design Resources
Design Files
3 design files
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Models
MRF101AN/BN S-Parameters
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Printed Circuit Boards and Schematics
MRF101AN 1.8-250 MHz 4-Up Reference Circuit Design Files
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Calculators
MRF101AN, MRF101BN RF Power Electromigration MTTF Calculation Program
Hardware
2 hardware offerings
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Evaluation and Development BoardsMRF101AN Reference Circuits
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Evaluation and Development BoardsMRF101AN RF Essentials Kit