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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA01106D, TO-220-3
These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
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Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
Detailed Data |
13.56 | CW | 130 CW | 27.1 | 79.6 | MRF101AN-13MHZ | Tool Summary Page |
27 | CW | 125 CW | 24.9 | 79.6 | MRF101AN-27MHZ | |
40.68 | CW | 120 CW | 23.8 | 81.5 | MRF101AN-40MHZ | |
50 | CW | 119 CW | 22.8 | 82.1 | MRF101AN-50MHZ | |
81.36 | CW | 130 CW | 23.2 | 80.8 | MRF101AN-81MHZ | |
87.5-108 | CW | 115 CW | 20.6 | 76.8 | MRF101AN-88MHZ | |
136-174 | CW | 104 CW | 21.2 | 76.5 | MRF101AN-VHF | |
230 | Pulse (100 µsec, 20% Duty Cycle) | 115 Peak | 21.1 | 76.7 | MRF101AN-230MHZ |
Frequency (MHz) |
Signal Type | VSWR | Pin (dBm) |
Test Voltage |
Result |
40.68 | CW | > 65:1 at all Phase Angles | 0.64 CW | 50 | No Device Degradation |
230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 1.8 Peak (3 dB Overdrive) | 50 | No Device Degradation |
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