Documentation
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Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins
1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor
MRF1K50H Receive alerts
This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
Product Details
Features
- High Drain-source Avalanche Energy Absorption Capability
- Unmatched Input and Output
- Device Can Be Used Single-Ended or in a Push-Pull Configuration
- Characterized from 30 to 50 V
- High Rugggedness. Handles 65:1 VSWR.
- This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
- RoHS Compliant
- Recommended Driver: MRFE6VS25N (25 W)
- Lower Thermal Resistance Part Available: MRF1K50N
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI, diathermy, skin laser and ablation
- Industrial heating, welding and drying systems
- Broadcast
- Radio broadcast
- VHF TV broadcast
- Aerospace
- VHF omnidirectional range (VOR)
- HF and VHF communications
- Weather radar
- Mobile Radio
- VHF and UHF base stations
Key Parametrics
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- Frequency (Min) (MHz)
- 1.8
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- Frequency (Max) (MHz)
- 500
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- Supply Voltage (Typ) (V)
- 50
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- P1dB (Typ) (dBm)
- 61.8
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- P1dB (Typ) (W)
- 1500
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- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 1500.0 @ Peak
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- Test Signal
- Pulse
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- Power Gain (Typ) (dB) @ f (MHz)
- 23.7 @ 230
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- Efficiency (Typ) (%)
- 74
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- Thermal Resistance (Spec) (℃/W)
- 0.12
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- Matching
- unmatched
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- Class
- AB
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- Die Technology
- LDMOS
RF Performance Table
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 27 | CW | 1550 CW | 25.9 | 78.3 |
| 81.36(1) | CW | 1400 CW | 23.0 | 75.0 |
| 87.5-108(2,3) | CW | 1475 CW | 23.3 | 83.4 |
| 230(4) | Pulse (100 µsec, 20% Duty Cycle) | 1500 Peak | 23.7 | 74.0 |
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.
Design Resources
Design Files
1-5 of 16 design files
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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.
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Models
MRF1K50H RF High-Power Model AWR Product Model Design Kit
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Models
MRF1K50H RF High-Power Model ADS Product Model Design Kit
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.
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Models
MRF1K50H S-Parameters