300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF300AN

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Product Details

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    250
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
13.56CW320 CW28.179.7
27330 CW27.480.0
40.68330 CW28.279.0
50320 CW27.373.0
81.36325 CW25.177.5
144320 CW23.073.0
230Pulse
(100 µsec, 20% Duty Cycle)
330 Peak20.475.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
40.68Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles2 Peak
(3 dB Overdrive)
50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles6 Peak
(3 dB Overdrive)
50No Device Degradation

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

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Design Files

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