300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF300AN

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Product Details

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Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • HF and VHF communications
  • Switch mode power supplies

Part numbers include: MRF300AN, MRF300AN-13MHZ, MRF300AN-144MHZ, MRF300AN-230MHZ, MRF300AN-50MHZ, MRF300AN-81MHZ, MRF300BN.

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
13.56CW320 CW28.179.7
27330 CW27.480.0
40.68330 CW28.279.0
50320 CW27.373.0
81.36325 CW25.177.5
144320 CW23.073.0
230Pulse
(100 µsec, 20% Duty Cycle)
330 Peak20.475.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
40.68Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles2 Peak
(3 dB Overdrive)
50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles6 Peak
(3 dB Overdrive)
50No Device Degradation

Documentation

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4 documents

Design Resources

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Design Files

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